bc817-16-g/25-g/40-g (npn) rohs device general purpose t ransistors qw -btr28 page 1 rev :a features -for general af applications. -high collector current. -high current gain. -low collector-emitter saturation voltage. marking: bc817-16-g: 6a BC817-25-G: 6b bc817-40-g: 6c diagram: d i m e n s i o n s i n i n c h e s a n d ( m i l l i m e t e r ) parameter v alue unit collector-base voltage collector-emitter voltage emitter-base voltage collector current-continuous collector power dissipation junction and storage temperature range s o t - 2 3 3 1 2 0.1 19(3.00) 0.1 10(2.80) 0.056(1.40) 0.047(1.20) 0.083(2.10) 0.066(1.70) 0.044(1.10) 0.035(0.90) 0.020(0.50) 0.013(0.35) 0.006(0.15) 0.002(0.05) 0.103(2.60) 0.086(2.20) 0.006(0.15) max 0.007(0.20) min symbol parameter conditions min max unit collector-base breakdown voltage collector-emitter breakdown voltage emitter-base breakdown voltage collector cut-of f current emitter cut-of f current dc current gain collector-emitter saturation voltage base-emitter saturation voltage base-emitter voltage collector capacitance t ransition frequency 50 45 5 100 40 100 0.1 0.1 600 0.7 1.2 1.2 v v v a a v v v pf mhz v (br)cbo v (br)ceo v (br)ebo i cbo i ebo h fe(1) h fe(2) v ce(sa t) v be(sa t) v be(on) c ob f t i c =10 a, i e =0 i c =10ma, i b =0 i e =1 a, i c =0 v cb =45v , i e =0 v eb =4v , i c =0 v ce =1v , i c =100ma v ce =1v , i c =500ma i c =500ma, i b =50ma i c =500ma, i b =50ma v ce =1v , i c =500ma v cb =10v , f=100mhz v ce =-5v , i c =-10ma, f=100mhz 1 base 2 emitter collector 3 v cbo v ceo v ebo i c p c t j , t stg 50 45 5 0.5 300 -55 to +150 v v v a mw o c t yp 10 rank bc817-16-g BC817-25-G bc817-40-g classification of hfe(1) range 160-400 250-600 100-250 maximum ratings (at t a =25c unless otherwise noted) electrical characteristics (at t a =25c unless otherwise noted) symbol
ra ting and characteristic cur ves (bc817-16-g/25-g/40-g) page 2 qw -btr28 fig.1 t ypical pulsed current gain vs. collector current h f e , p u l s e d c u r r e n t g a i n i c , collector current (a) 0 . 0 0 1 0 . 1 1 fig.2 collector-emitter saturation v oltage vs. collector current 0 v c e ( s a t ) , c o l l e c t o r - e m i t t e r v o l t a g e ( v ) i c , collector current (ma) 0 . 0 1 fig.5 collector cut-of f current vs. ambient t emperature 0 . 0 1 i c b o , c o l l e c t o r c u r r e n t ( n a ) o t a , ambient t emperature ( c) 2 5 1 5 0 0 . 6 1 0 0 1 rev :a 0 . 3 0 . 1 1 0 0 4 0 0 5 0 0 3 general purpose t ransistors 1 0 0 0 . 1 1 fig.6 collector-base capacitance vs. collector-base v oltage 0 c o b , c o l l e c t o r - b a s e c a p a c i t a n c e ( p f ) v cb , collector-base v oltage (v) 0 4 0 3 0 1 4 1 0 2 0 fig.4 base-emitter on v oltage vs. collector current 0 . 2 v b e ( o n ) , b a s e - e m i t t e r o n v o l t a g e ( v ) i c , collector current (ma) 1 1 0 0 0 1 0 0 1 0 . 6 1 0 fig.3 base-emitter saturation v oltage vs. collector current 0 . 2 v b e ( s a t ) , b a s e - e m i t t e r v o l t a g e ( v ) i c , collector current (ma) 1 1 0 0 0 1 0 0 1 . 2 0 . 6 1 . 0 1 0 0 . 4 0 . 8 0 . 0 1 2 1 0 0 2 0 0 3 0 0 v ce =5v o 125 c o 25 c o -40 c 0 . 1 0 . 2 0 . 4 0 . 5 =10 o 125 c o 25 c o -40 c =10 o 125 c o 25 c o -40 c 0 . 4 0 . 8 v ce =5v o 125 c o 25 c o -40 c 5 0 7 5 1 2 5 v cb =40v 6 1 2 1 8 3 0
ra ting and characteristic cur ves (bc817-16-g/25-g/40-g) page 3 qw -btr28 fig.7 gain bandwidth product vs. collector current h f e , g a i n b a n d w i d t h p r o d u c t ( m h z ) i c , collector current (ma) 1 1 0 0 fig.8 power dissipation vs. ambient t emperature 0 p d , p o w e r d i s s i p a t i o n ( m w ) t a , ambient t emperature (c) 0 3 5 0 rev :a 1 5 0 1 0 0 0 4 0 0 5 0 0 1 5 0 general purpose t ransistors 1 0 1 0 0 0 1 0 0 2 0 0 3 0 0 5 0 1 0 0 2 0 0 3 0 0 v ce =10v 2 5 0 5 0
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